Abstract
Thin films of 2,9-Bis [2-(4-chlorophenyl) ethyl] anthrax [2,1,9-def: 6,5,10-d'e'f'] diisoquinoline-1,3,8,10 (2H, 9H) tetrone (Ch-diisoQ) were prepared by thermal evaporation technique. Structural properties of these (as-prepared and annealed at 373, 423, 473 and 523 K) films were determined by X-ray diffraction and scanning electron microscopy, which showed that the grain sizes increasing by the annealing effect. The transmittance and reflectance of all Ch-diisoQ thin films were measured in the range 200-2500 nm. Some optical constants such as optical band gap (E-g), dispersion energy (E-d), single oscillator energy (E-o) and optical dielectric constant at a higher frequency (e(infinity))were calculated at different annealing temperatures. The optical band gap of the samples is decreased with the increase of annealing temperatures due to the increasing of the p-dislocation. Finally, the values of the optical susceptibility, X-(3), were found to be annealing dependence.