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Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness
Journal article   Peer reviewed

Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness

B. Ilahi, L. Sfaxi, G. Bremond, M. Hjiri and H. Maaref
Physica status solidi. C, Vol.2(4), pp.1325-1330
01/01/2005

Abstract

68.65.Ac 68.65.Hb 78.55.Cr 78.67.Hc

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