Abstract
We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 degrees C to 1100 degrees C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 degrees C), thus offering a method for in-situ Czochralski process. We show well-behaved high- /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)