Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation

Journal article

Peer reviewed

Mukesh Kumar, RAJKUMAR Rajkumar, Dinesh Kumar and A. K Paul

Microelectronic engineering, Vol.82(1), pp.53-59

01/09/2005

Abstract

Applied sciences

Electronics

Exact sciences and technology

General

Instruments, apparatus, components and techniques common to several branches of physics and astronomy

Microelectronic fabrication (materials and surfaces technology)

Physics

Scanning probe microscopes, components and techniques

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation
Creators - without role: Mukesh Kumar - Kurukshetra University
RAJKUMAR Rajkumar - Semiconductor Complex Limited, Mohali 160059, India
Dinesh Kumar - Kurukshetra University
A. K Paul - Central Scientific Instruments Organisation
Publication Details: Microelectronic engineering, Vol.82(1), pp.53-59
Publisher: Elsevier Science
Identifiers: 9926400808331
Academic Unit: Prince Sattam Bin Abdulaziz University
Language: English
Resource Type: Journal article