Abstract
In this study, an analysis of temperature-dependent electrical characteristics of ZnPc/p-Si structure has been presented. Conduction mechanisms that are accounted for the organic/inorganic devices are evaluated. At low forward voltage, current–voltage (
I
–
V
) characteristics show ohmic behavior, limiting extraction of holes from p-Si over the ZnPc/p-Si heterojunction. Thermally activated conduction mechanism appears to be space-charge-limited conduction mechanism, taking into account the presence of an exponential trap distribution with total concentration of traps,
N
t
of 5.77 × 10
25
m
−3
. The series resistance is found to be temperature dependent. There is a critical point on the regime of series resistance at 200 K. The capacitance varies with temperature at different rates below and above room temperature, indicating a variation in the dielectric constant.