Abstract
The current work aims to investigate elasto-thermodiffusive wave propagation in a homogeneous, isotropic, and thermally conducting excited semiconductor medium. The two-temperature theory is utilized in the context of the linear photo-thermoelasticity (PTE) theory of semiconductors. Thermal and elastic memories found in the equations for heat, motion, and charge carrier field are taken into account. The governing equations are applied according to the mass-diffusion transport processes in one dimension (1D), under the influence of optoelectronics with a non-Gaussian laser pulse. Laplace transforms for dimensionless quantities are utilized to obtain the analytical linear solutions for the main quantities during thermoelastic (TD) and electronic (ED) deformation. The numerical approximations solutions of the primary relevant relations are done in the Laplace inverse time domain to observe the exact expressions of the main physical quantities according to some boundary surface conditions. The physical parameters of silicon (Si) semiconductor material are used to obtain the numerical computational results. According to the difference of the thermal memories and two-temperature parameters, the wave propagation of the physical fields is obtained graphically and the results are discussed and analyzed theoretically.