Abstract
The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green-Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore-Gibson-Thompson (MGT) equation, are derived by adding a single delay factor to the GN-III model. The impact of temperature and electrical elastic displacement of semiconductors throughout the excited thermoelectric mechanism can be studied theoretically using this model. The proposed model was used to investigate the interactions between the processes of thermoelastic plasma in a rotating semiconductor solid sphere that was subjected to a thermal shock and crossed to an externally applied magnetic field. The influence of rotation parameters on various photothermal characteristics of silicon solid was presented and explored using the Laplace technique.