Abstract
The governing equations for microelongated semiconductors are provided using a unique mathematical-physical approach. When the microelongated elastic semiconductor medium is energized, the model is investigated following the photo-generated transport processes. When microelongation is taken into consideration, the primary governing equations show the interplay between elastic, thermal, and plasma waves. The generalized photo-thermoelasticity hypothesis is taken into account in this context. The harmonic wave method has been used to translate the dimensionless formulas for temperature, carrier density, displacement, stresses, and microelongation distributions. The general solutions of the principal distributions are derived during the electronic and thermoelastic deformation processes in two dimensions (2D). The application of some thermal-mechanical stresses as well as plasma conditions occurs when the semiconductor medium is homogeneous, linear, and isotropic. A numerical simulation using the semiconductor material silicon (Si) is done to demonstrate the findings. Graphical representations of the variations in the wave propagations of the principal physical fields have been made.