Abstract
In this work, a novel mechanical-elastic-thermodiffusion (METD) model is studied for the non-local semiconductor material. The interferences between the holes and electrons for the photo-excited medium are taken into account. The photothermal theory and the generalized thermoelasticity theory are applied to describe the governing equations. The non-local medium is investigated according to changes in thermal conductivity when the thermal conductivity depends on the temperature gradient. During the excitation transport processes according to the one-dimensional (1D) deformation, the thermoelastic deformation (TED) and electronic deformation (ED) are considered. The main fields are taken dimensionless to obtain some new parameters. To obtain the main quantities algebraically, the Laplace transform is applied. The mechanical ramp type is applied during the thermal-plasma recombination processes taken on the exciting free surface. The inversion technique of Laplace transform according to some approximations is utilized numerically to obtain the closed-form of the main fields. The non-local, thermal memories and thermal conductivity parameters of semiconductor medium are taken into consideration to carry out some comparisons graphically and discussed theoretically for silicon medium.