Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs

Journal article

Peer reviewed

A Bchetnia, A Rebey, T Boufaden and B EL JANI

Journal of crystal growth, Vol.207(1-2), pp.15-19

01/11/1999

Abstract

Chemistry

Cross-disciplinary physics: materials science; rheology

Decomposition reactions (pyrolysis, dissociation, and group ejection)

Exact sciences and technology

General and physical chemistry

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

Theory and models of film growth

Theory of reactions, general kinetics

Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry

Vapor phase epitaxy; growth from vapor phase

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Title: Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs
Creators - without role: A Bchetnia - University of Monastir
A Rebey - University of Monastir
T Boufaden - University of Monastir
B EL JANI - University of Monastir
Publication Details: Journal of crystal growth, Vol.207(1-2), pp.15-19
Publisher: Elsevier
Identifiers: 9928805708331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article