Abstract
Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al(0.83)In(0.17)N alloy exhibited thermal conductivity of 4.87 W/(m K) measured by 3 omega differential method. The Seebeck coefficient of n-Al(0.83)In(0.17)N was measured as -6.012x10(-4) V/K by thermal gradient method. The sheet resistivity of n-Al(0.83)In(0.17)N was measured by using Van der Pauw method, and the electrical conductivity was measured as 2.38x10(4)/(Omega m). The thermoelectric figure of merit (Z*T) of n-type Al(0.83)In(0.17)N was measured as 0.532 at room temperature (T=300 K). The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application. (c) 2010 American Institute of Physics. [doi:10.1063/1.3489086]