Abstract
The generalized model for plasma, thermal and elastic waves under thermo mechanical response model of a reflection-photo-thermal-diffusion (RPTD) for semiconductor material has been applied to determine the carrier density, the displacement, the temperature, diffusion and the stresses in a semiconductor elastic medium. The reflection coefficient ratios of incident wave (CI) were analytical obtained by using the method of harmonic wave. For a semiconducting elastic material like silicon, variations of the amplitude of reflection coefficient ratios with the angle of incidence are graphical shown. Numerical results show the influence of thermoenergy coupling parameter, the thermoelectric coupling parameter and the complex circular frequency with variations of thermal relaxation times on reflection coefficient ratios.