Abstract
In this study, we investigated the effect of the thickness of metal-dioxide thin films on silicon (Si) microelectromechanical systems (MEMS) for sensitive, accurate, and reproducible detection of gamma-radiation dose. Silicon wafers and microcantilevers were coated with various thicknesses of titanium dioxide (TiO2) thin films and controlled by the number of cycles in atomic layer deposition (ALD) under 17-mbar pressure and temperature of 200 degrees C. All samples were exposed to different doses of gamma (0, 10, and 20 kGy) using a(60)Co source. Before and after gamma irradiation, the optical and mechanical properties of the TiO2 thin films on Si wafers were studied by spectroscopic ellipsometry (SE) and atomic force microscopy (AFM). The resonance frequency shift (RFS) resulting from exposing different thicknesses of TiO2 thin films on MEMS-based cantilevers to gamma-radiation doses were evaluated by AFM. SE results revealed the film thicknesses of 11.91, 21.77, 62.91, and 218.23 nm at 250, 500, 1250, and 2500 coating cycles, respectively. Through SE, other optical constants, such as surface roughness (SR) and refractive index (n), were obtained. The root-mean-square (RMS) SR obtained from AFM images and SE measurements on Si wafers showed the same behavior under gamma radiation according to the TiO2 thin-films thicknesses. The RFS results show that the best film thickness for reproducible and sensitive gamma-radiation detection was 218.23 nm. The frequency shift as the gamma dose increase from 0 to 20 kGy was similar to 60 Hz. It is a very palpable and linear shift; hence, it can be used as a dosimeter sensor. The results were verified by the statistical correlation coefficient method to find the correlation between RFS and the gamma dose at different film thicknesses. Correlation results are consistent with other results.