Abstract
Indeno-fluorene compounds have been applied as organic field-effect transistors. Indeno[1,2-b]flourene-6,12dione (IF-dione) films of different film thickness have been obtained using a thermal evaporating technique. The XRD analysis revealed that the crystalline nature of the IF-dione films with thickness beyond 150 nm had been boosted by increasing the film thickness. The increase of the film thickness from 150 nm to 540 nm led to a rise in the mean crystallite size values from 11.65 to 19.16 nm. The variation of the electrical conductivity of IF-dione thin films with the reciprocal temperatures showed that the thermal activation energy of the sample had been diminished as the film thickness increases. Mott's hopping of variable range conduction operation explained the behavior of the conductivity. The study of the current-density-voltage (J-V) characteristics of IF-dione thin-film confirmed that the Ohmic conduction mechanism is dominant below a threshold voltage (Vt), whereas the space charge limited conduction has been satisfied beyond Vt. It was found that the total trap concentration values are compatible with the other organic molecules. Also, many electrical parameters have been evaluated for different film thicknesses.
•Various thickness of IF-dione films were prepared by thermal vacuum evaporation technique.•The current-density-voltage characteristic of IF-dione have been investigated.•The Ohmic conduction and the SCLC conduction have been observed in the low and high voltage, respectively.•Many of electrical parameters have been calculated.