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Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In$_{0.5}$Ga$_{0.5}$As and In$_{0.3}$Ga$_{0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
Journal article   Peer reviewed

Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In$_{0.5}$Ga$_{0.5}$As and In$_{0.3}$Ga$_{0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

Hong-Quan Nguyen, Edward Yi Chang, Hung-Wei Yu, Hai-Dang Trinh, Chang-Fu Dee, Yuen-Yee Wong, Ching-Hsiang Hsu, Binh-Tinh Tran and Chen-Chen Chung
Applied physics express, Vol.5(5), p.55503
05/2012

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