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- Title
- Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe
- Creators - without role
- Xu Yang - University of Chinese Academy of SciencesXiao-Mei Li - Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, ChinaYang Li - University of Chinese Academy of SciencesYan Li - University of Chinese Academy of SciencesRui Sun - University of Chinese Academy of SciencesJia-Nan Liu - Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, ChinaXuedong Bai - University of Chinese Academy of SciencesNa Li - University of Chinese Academy of SciencesZong-Kai Xie - Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, ChinaLei Su - University of Chinese Academy of SciencesZi-Zhao Gong - University of Chinese Academy of SciencesXiang-Qun Zhang - Institute of PhysicsWei He - Institute of PhysicsZhaohua Cheng - Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Publication Details
- Nano letters, Vol.21(1), pp.77-83
- Identifiers
- 9944402908331
- Academic Unit
- King Abdullah University of Science & Technology
- Language
- English
- Resource Type
- Journal article