Abstract
Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925°C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations.
•Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates•Impact of rapid thermal annealing on the optical properties and carrier dynamics•Time resolved photoluminescence spectroscopy was applied.•PL transients became continuously faster with increasing annealing temperature.•Enhancement in the PL efficiency with increasing annealing temperature up to 925°C