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Topological Attributes of Silicon Carbide SiC4-II[i,j] Based on Ve-Degree and Ev-Degree
Journal article   Open access  Peer reviewed

Topological Attributes of Silicon Carbide SiC4-II[i,j] Based on Ve-Degree and Ev-Degree

Abid Mahboob, Dalal Alrowaili, Sajid Mahboob Alam, Rifaqat Ali, Muhammad Waheed Rasheed and Imran Siddique
Journal of chemistry, Vol.2022
07/04/2022

Abstract

Chemistry Chemistry, Multidisciplinary Physical Sciences Science & Technology
url
https://doi.org/10.1155/2022/3188993View
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