Abstract
•We propose a MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0–10V.•It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects.•We use here a non-conducting structure (Polyimide) with patterning of a conductive metal layer to form the gate electrode. This patterned layer allows independent control of mechanical and electrical properties, which provides flexibility and control over the biasing of the electrodes. This allows more gate functions than previously possible using a single basic gate design.•Theoretical lumped parameter model for torsion based MEMS actuator is also presented.
In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0–10V. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535μm by 150μm with a gap of 1.92μm and a resonant frequency of 6.51kHz. The device is capable of performing the switching operation with a frequency of 1kHz.