Transferable non-orthogonal tight-binding model for silicon

Journal article

Peer reviewed

A Laref, B Bouhafs, M Certier, N Bouarissa and H Aourag

Physica status solidi. B. Basic research, Vol.208(2), pp.413-426

08/1998

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron density of states and band structure of crystalline solids

Electron states

Elemental semiconductors

Exact sciences and technology

Methods of electronic structure calculations

Physics

Theories and models of many electron systems

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Title: Transferable non-orthogonal tight-binding model for silicon
Creators - without role: A Laref - Université Djillali Liabes
B Bouhafs - Université Djillali Liabes
M Certier - Université Djillali Liabes
N Bouarissa - Université Djillali Liabes
H Aourag - Université Djillali Liabes
Publication Details: Physica status solidi. B. Basic research, Vol.208(2), pp.413-426
Publisher: Wiley
Identifiers: 9951982108331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article