Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers

Journal article

Peer reviewed

J. R Grim, M Benamara, M Skowronski, W. J Everson and V. D Heydemann

Semiconductor science and technology, Vol.21(12), pp.1709-1713

01/12/2006

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Physics

Surface treatments

1 Record Views

Title: Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers
Creators - without role: J. R Grim - Carnegie Mellon University
M Benamara - Carnegie Mellon University
M Skowronski - Carnegie Mellon University
W. J Everson - Freeport-McMoRan
V. D Heydemann - Freeport-McMoRan
Publication Details: Semiconductor science and technology, Vol.21(12), pp.1709-1713
Publisher: Institute of Physics
Identifiers: 9931952708331
Academic Unit: University Ha'il
Language: English
Resource Type: Journal article