Abstract
Defect structures in a homoepitaxial diamond film grown by chemical vapor deposition have been studied by cross-sectional transmission electron microscopy. Many interstitial dislocation loops are discerned in the (001) interface. The internal region grown on the (1(1) over bar1$) facet comprises stacking faults and twins, while that on the (001) face contains mainly interstitial dislocation loops aligned in rows along similar to[112] directions. Fe and Si impurities were detected only at the interface by analytical electron microscopy. The origin of the defects is briefly discussed. (C) 1996 American Institute of Physics.