Transparent SnO–SnO2 p–n Junction Diodes for Electronic and Sensing Applications

Zhenwei Wang; Pradipta K. Nayak; Arwa Albar; Nini Wei; Udo Schwingenschlögl; Husam N. Alshareef

doi:10.1002/admi.201500374

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Transparent SnO–SnO2 p–n Junction Diodes for Electronic and Sensing Applications

Journal article

Peer reviewed

Transparent SnO–SnO2 p–n Junction Diodes for Electronic and Sensing Applications

Zhenwei Wang, Pradipta K. Nayak, Arwa Albar, Nini Wei, Udo Schwingenschlögl and Husam N. Alshareef

Advanced materials interfaces, Vol.2(18), p.n/a

14/12/2015

DOI: https://doi.org/10.1002/admi.201500374

Abstract

interfacial layers

p–n diodes

sensors

temperature sensors

tin dioxide

tin monoxide

A SnO/SnO2 p–n junction diode is fabricated using a room‐temperature sputtering process. The p–n diode shows an ideality factor of ≈3 and rectification ratio of ≈103. A large temperature‐dependent knee voltage shift is observed (−20 mV °C−1) for the diode, indicating its potential in transparent temperature sensing applications.

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Title: Transparent SnO–SnO2 p–n Junction Diodes for Electronic and Sensing Applications
Creators - without role: Zhenwei Wang - King Abdullah University of Science and Technology
Pradipta K. Nayak - King Abdullah University of Science and Technology
Arwa Albar - King Abdullah University of Science and Technology
Nini Wei - King Abdullah University of Science and Technology
Udo Schwingenschlögl - King Abdullah University of Science and Technology
Husam N. Alshareef - King Abdullah University of Science and Technology
Publication Details: Advanced materials interfaces, Vol.2(18), p.n/a
Number of pages: 7
Identifiers: 9933104508331
Academic Unit: University of Jeddah; King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article