Abstract
An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the "green-yellow gap". In particular, true green (similar to 555 nm) and true yellow (similar to 590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm(2) (75 mA in a 0.5 X 0.5 mm(2) device) and a low turn-on voltage of similar to 2.5 V, while having an internal quantum efficiency of 39%, and without "efficiency droop" up to an injection current density of 29.5 A/cm(2). By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of similar to 6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.