Abstract
In this paper, we investigate matched AlGaAs/GaAsBiN quantum structure as a potential candidate for tunneling diode application. The physical properties of GaAsBiN, in zero mismatch condition, are firstly calculated by using the band-anticrossing model and then used as input parameters for modeling energy transmission through AlGaAs/GaAsBiN superlattice. A comprehensive study is proposed to master the transmission response with and without an external applied electric field. The effect of several structural factors such as bismuth content coupled with aluminum composition, number of wells, and widths of wells and barriers are examined. The resonant tunneling lifetime change is also carefully analyzed. In a second step, the J–V characteristic of tunneling diode based on AlGaAs/GaAsBiN pair has been computed. The performance of this device is qualified by determining the peak to valley current ratio. The optimization of diode response has been made by varying the physical parameters of AlGaAs/GaAsBiN structure. The results show the potentiality of GaAsBiN material coupled with AlGaAs alloy for exploitation as an active part in resonant tunneling diode.