Abstract
In the context of the two-temperature thermoelasticity theory, a novel mathematical-physical model is introduced that describes the influence of moisture diffusivity in the semiconductor material. The two-dimensional (2D) Cartesian coordinate is used to study the coupling between the thermo-elastic plasma waves and moisture diffusivity. Dimensionless quantities are taken for the main physical fields with some initial conditions in the Laplace transform domain. The linear solutions are obtained analytically along with unknown variables when some conditions are loaded at the surface of the homogenous medium according to the two-temperature theory. The Laplace transform technique in inversion form is utilized with some numerical algebraic approximations in the time domain to observe the exact expressions. Due to the effects of the two-temperature parameter and moisture diffusivity, the numerical results of silicon material have been introduced. The impacts of thermoelectric, thermoelastic, and reference moisture parameters are discussed graphically with some physical explanations.