Abstract
The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional
In
As
∕
In
Al
Ga
As
quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to
76
nm
at
∼
1.64
μ
m
from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.