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Ultrafast Transient Terahertz Conductivity of Mono layer MoS2 and WSe2 Grown by Chemical Vapor Deposition
Journal article   Peer reviewed

Ultrafast Transient Terahertz Conductivity of Mono layer MoS2 and WSe2 Grown by Chemical Vapor Deposition

Callum J. Docherty, Patrick Parkinson, Hannah J. Joyce, Ming-Hui Chiu, Chang-Hsiao Chen, Ming-Yang Lee, Lain-Jong Li, Laura M. Herz and Michael B. Johnston
ACS nano, Vol.8(11), pp.11147-11153
01/11/2014
PMID: 25347405

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Science & Technology Science & Technology - Other Topics Technology
We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

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