Abstract
Solar-blind photodetectors are designed from individual In2Ge2O7 nanobelts using a standard photolithography technique. The detectors demonstrate high sensitivity and selectivity towards the solar-blind spectrum, fast response and decay times similar to 3 ms, high responsivity similar to 3.9 x 10(5) A W-1, and high quantum efficiency similar to 2.0 x 10(8)%.