Abstract
Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.
- Title
- Ultrathin channels make transistors go faster
- Creators - without role
- Thomas D. Anthopoulos - King Abdullah University of Science and Technology
- Publication Details
- Nature materials, Vol.18(10), pp.1033-1034
- Publisher
- Springer Nature
- Number of pages
- 2
- Identifiers
- 9945029808331
- Academic Unit
- King Abdullah University of Science & Technology
- Language
- English
- Resource Type
- Journal article