Abstract
Two dimensional (2D) layered materials such as graphene and transition metal dichalcogenides (TMDCs) have gain profound attention owing to their unique electrical, optical, structural and mechanical properties. These novel features make them promising candidate for the next generation optoelectronic and photonic devices. Here, we demonstrated the gate-voltage dependent current modulation of vertical Au/WS2/Gr Schottky barrier. A clear rectification is observed in J-V characteristic curves at different gate-voltage due to asymmetric barriers Au/WS2 and WS2/Gr. The current modulation is obtained by varying the gate-voltage and the extracted rectification ratios ranging from 2.25 × 103 at −60 V to 1.65 × 103 at +60 V, respectively. Furthermore, the junction is utilized for the photo response at several drain to source and gate voltages which reveals modulation in the photocurrent. The photocurrent detected at Vds 0.5 V is ~24 μA that is enhanced to ~52 μA upon varying the Vds to 1 V. Gate tunable photoresponse of the junction depicts that the photocurrent is enhanced from 16 μA at Vg 20 V to ~17 μA at Vg 60 V. Our results demonstrate an effective way to modulate the current of Schottky junction (Au/WS2/Gr) by employing gate voltage whereas the tunability in the photocurrent unveil its potential applications in next generation photodetectors.
•Schottky barrier is formed in Au/WS2/Gr junction.•Asymmetric barristor rectification is modulated by applying back-gate voltage.•Photocurrent response is investigated at different Vds and Vg.