Abstract
A universal block copolymer pattern transfer method was demonstrated to produce Co nanostructures consisting of arrays of lines or dots from a polystyrene-block-polydimethylsiloxane (PS-b-PDMS) diblock copolymer. Three processes were used: liftoff, a damascene process, and ion beam etching using a hard mask of tungsten, including a sacrificial poly(methyl methacrylate) layer under the PS-b-PDMS for the etch and liftoff processes. The ion beam etch process produced the most uniform magnetic arrays. A structural and magnetic comparison in terms of uniformity, edge roughness and switching field distribution has been reported.