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VLSI Materials: A Comparison between Buried Oxide SOI and SOS
Journal article   Peer reviewed

VLSI Materials: A Comparison between Buried Oxide SOI and SOS

A. H. Hamdi, F. D. McDaniel, R. F. Pinizzotto, S. Matteson, H. W. Lam and S. D. S. Malhi
IEEE transactions on nuclear science, Vol.30(2), pp.1722-1725
04/1983
DOI: https://doi.org/10.1109/TNS.1983.4332624

Abstract

Annealing Atomic layer deposition Circuits Crystal microstructure Crystalline materials Instruments Ion implantation Laboratories Silicon Very large scale integration
High dose oxygen ion implantation in Si has been used to form a 0.48 μm thick buried oxide layer. The total dose was 2.1 × 1018 0+/cm2 implanted at 150 keV/atom. Epitaxial growth was employed to deposit a 0.38 μm thick layer on top of the implanted wafers. High quality single crystal Si on the entire 76 mm diameter wafer was acheived. The microstructure of the buried oxide SOI is compared to SOS material.

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