Abstract
Indium concentration profiles of as-implanted and annealed uncapped germanium samples.
Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium–vacancy clusters, In
n
V
m
. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions.