Abstract
Pulsed laser deposition using bulk NiOFe2O3 targets onto heated substrates has been used to synthesize single phase Ni spinel ferrite films onto various substrates. flowing oxygen has been used during the deposition to maintain the oxygen stoichiometry. Ni ferrite films have been deposited onto C-, R-, and A-plane sapphire, polycrystalline Al2O3, and fused silica. Single-crystal (111) oriented NiOFe2O3 films have been made onto C-plane sapphire for substrate temperatures of greater than 900 degrees C. Polycrystalline highly (400) textured Ni ferrite films have been made onto R-plane sapphire with I(400)/I(311)=6.15. Films made onto A-plane sapphire, polycrystalline alumina, and fused silica showed only moderate texturing. The coercive force of the (111) oriented NiOFe2O3 was 120 Oe perpendicular to the film plane and 95 Oe in plane. (C) 1996 American Institute of Physics.