Vertical electronic coupling between In As ∕ In P quantum-dot layers emitting in the near-infrared range

P Miska; J Even; C Paranthoen; O Dehaese; A Jbeli; M Senès; X Marie

doi:10.1063/1.1865332

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Vertical electronic coupling between In As ∕ In P quantum-dot layers emitting in the near-infrared range

Journal article

Peer reviewed

Vertical electronic coupling between In As ∕ In P quantum-dot layers emitting in the near-infrared range

P Miska, J Even, C Paranthoen, O Dehaese, A Jbeli, M Senès and X Marie

Applied physics letters, Vol.86(11), pp.111905-111905-3

07/03/2005

DOI: https://doi.org/10.1063/1.1865332

Abstract

Stacked InAs quantum dots (QDs) grown on InP(113)B are analyzed both experimentally and theoretically in order to study the influence of the electronic vertical coupling between the QD layers. Improved growth conditions enable us to control the optimum QD height of the samples, thus yielding an emission wavelength of our nanostructures at about 1.55 μ m at room temperature. Three samples containing three QD layers with different vertical spacing are studied. The QD electronic structure is studied by continuous-wave photoluminescence and time-resolved photoluminescence experiments at low temperature. A simplified theoretical model is developed, yielding results consistent with experimental data. This analysis evidences the electronic coupling between the QD layers.

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Title: Vertical electronic coupling between In As ∕ In P quantum-dot layers emitting in the near-infrared range
Creators - without role: P Miska - Laboratoire d'Etudes des Nanostructures Semiconductrices (INSA UMR-CNRS C6074), 20 Avenue des Buttes de Coesmes, CS 14315, 35043 Rennes Cedex, France
J Even - Laboratoire d'Etudes des Nanostructures Semiconductrices (INSA UMR-CNRS C6074), 20 Avenue des Buttes de Coesmes, CS 14315, 35043 Rennes Cedex, France
C Paranthoen - Laboratoire d'Etudes des Nanostructures Semiconductrices (INSA UMR-CNRS C6074), 20 Avenue des Buttes de Coesmes, CS 14315, 35043 Rennes Cedex, France
O Dehaese - Laboratoire d'Etudes des Nanostructures Semiconductrices (INSA UMR-CNRS C6074), 20 Avenue des Buttes de Coesmes, CS 14315, 35043 Rennes Cedex, France
A Jbeli - Institut National des Sciences Appliquées de Toulouse
M Senès - Institut National des Sciences Appliquées de Toulouse
X Marie - Institut National des Sciences Appliquées de Toulouse
Publication Details: Applied physics letters, Vol.86(11), pp.111905-111905-3
Publisher: American Institute of Physics
Identifiers: 9918317908331
Academic Unit: Majmaah University
Resource Type: Journal article