Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications

Journal article

Peer reviewed

Md. Hasan Raza Ansari, Hanrui Li and Nazek El-Atab

IEEE transactions on electron devices, Vol.70(3), pp.1344-1350

01/03/2023

Metrics

1 Record Views

Title: Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications
Creators - without role: Md. Hasan Raza Ansari - King Abdullah University of Science and Technology
Hanrui Li - King Abdullah University of Science and Technology
Nazek El-Atab - King Abdullah University of Science and Technology
Publication Details: IEEE transactions on electron devices, Vol.70(3), pp.1344-1350
Identifiers: 9943859408331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article