Abstract
We have investigated the magnetoresistance (MR) behavior of few-layer graphene grown on copper foils by chemical vapor deposition (CVD). we have found that the graphene consisting of 3-5 layers with fewer defects shows weak localization and positive MR effects, while the positive MR effect disappeared in graphene with higher defect density. The positive MR observed in our graphene samples with fewer defects suggests the presence of weak anti-localization effect. This also indicates that electrons in graphene grown by CVD maintain the properties of Dirac Fermions as long as the graphene is few-layer such that the system is similar to two dimensional single-layer graphene. (C) 2012 Elsevier Ltd. All rights reserved.