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Wideband quantum-dash-in-well superluminescent diode at 1.6 mu m
Journal article

Wideband quantum-dash-in-well superluminescent diode at 1.6 mu m

Hery S. Djie, Clara E. Dimas and Boon S. Ooi
IEEE photonics technology letters, Vol.18(13-16), pp.1747-1749
15/08/2006
DOI: https://doi.org/10.1109/LPT.2006.880796

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We demonstrate broadband superluminescent diode at similar to 1.6-mu m peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 run. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 degrees C under 8 kA/cm(2).

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