Abstract
In this paper, nitridation process of GaAs (1
0
0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method
I–
V and photoluminescence surface state spectroscopy (PLS
3) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.
The elaborated structures were characterised by
I–
V analysis. The saturation current
I
S, the ideality factor
n, the barrier height
Φ
Bn and the serial resistance
R
S are determined.
The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS
3 technique), the value of the interface state density
N
SS(
E) close to the mid-gap was estimated to be in the range of 2–4
×
10
11
eV
−1
cm
−2, indicating a good electronic quality of the obtained interfaces.
Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed.