Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

Journal article

Peer reviewed

M. B Kanoun, S GOUMRI-SAID, A. E Merad, G Merad, J Cibert and H Aourag

Semiconductor science and technology, Vol.19(11), pp.1220-1231

01/11/2004

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Dielectrics, piezoelectrics, and ferroelectrics and their properties

Electron density of states and band structure of crystalline solids

Electron states

Exact sciences and technology

Physics

Piezoelectricity and electromechanical effects

Semiconductor compounds

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Title: Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties
Creators - without role: M. B Kanoun - University of Abou Bekr Belkaïd
S GOUMRI-SAID - University of Burgundy
A. E Merad - University of Abou Bekr Belkaïd
G Merad - University of Abou Bekr Belkaïd
J Cibert - Laboratoire de Spectrométrie Physique, CNRS UMR 5588, Université J. Fourier, Grenoble I, BP87, 38402 Saint Martin d'Héres, France
H Aourag - University of Technology of Belfort-Montbéliard
Publication Details: Semiconductor science and technology, Vol.19(11), pp.1220-1231
Publisher: Institute of Physics
Identifiers: 9920408008331
Academic Unit: King Faisal University
Language: English
Resource Type: Journal article