Abstract
The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm(2)/V s with an I-on/I-off ratio of 6 X 10(7) and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3514249]