Zn1-xCdxSe (X=0.2-0.3) single-quantum-well laser diodes without GaAs buffer layers

Journal article

Peer reviewed

S Hayashi, A Tsujimura, S Yoshii, K Ohkawa and T Mitsuyu

Japanese journal of applied physics, Vol.31(10B), pp.L1478-L1480

15/10/1992

Abstract

Exact sciences and technology

Fundamental areas of phenomenology (including applications)

Lasers

Optics

Physics

Semiconductor lasers; laser diodes

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Title: Zn1-xCdxSe (X=0.2-0.3) single-quantum-well laser diodes without GaAs buffer layers
Creators - without role: S Hayashi - Central Research Laboratories
A Tsujimura - Central Research Laboratories
S Yoshii - Central Research Laboratories
K Ohkawa - Central Research Laboratories
T Mitsuyu - Central Research Laboratories
Publication Details: Japanese journal of applied physics, Vol.31(10B), pp.L1478-L1480
Publisher: Japanese journal of applied physics
Identifiers: 9943783308331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article