Abstract
We report molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters (similar to10 nm) on GaP(111) substrates. The growth process was based on the Au-catalyzed vapor-liquid-solid deposition. As determined by electron microdiffraction and high-resolution transmission electron microscopy, ZnSe nanowires grew generally along the and directions with the orientation relationship of (111)(ZnSe wire)//(111)(GaP) and <1 (1) over bar0>(ZnSe wire)//<1 (1) over bar0>(GaP). The dominant defects were found to be twins at the interface between the substrate and the nanowires along the (111) plane. (C) 2003 American Institute of Physics.