Abstract
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► We synthesized a novel n-type semiconducting perylene bisimide. ► The perylene is used as active unit in n-type self-assembled monolayer field-effect transistors (SAMFETs). ► Transistors were made by easiest device fabrication steps and exhibit electron mobilities in the range of 10−3cm2/Vs. ► First n-type SAMFETs on flexible substrates were fabricated. ► A flexible NMOS bias inverter based solely on n-type SAMFETs was build-up.
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10−3cm2/Vs with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.