Abstract
The effect of n doping on the band structure of lattice-matched GaNAsBi/GaAs quantum wells was investigated using a self-consistent calculation combined with the 16-band anti-crossing model. Bi/N incorporation and doping effects can offer a huge potential to engineer the electronic band structure of such materials suitable for the design of photodetectors and emitters operating at 1.3 mu m. The increase of the doping density induces a blue-shift of the fundamental transition energy in the doping range between 6 x 10(17) and 5 x 10(18) cm(-3). The absorption spectra dependence on the well width are discussed. To maintain the fundamental transition fixed at the wavelength 13 mu m, we have adjusted the Bi composition for the well width range between 4.5 and 10 nm with respect of the confinement conditions. (C) 2015 Elsevier B.V. All rights reserved.