p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

Journal article

Peer reviewed

K Ohkawa and T Mitsuyu

Journal of applied physics, Vol.70(1), pp.439-442

01/07/1991

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Physics

Solid surfaces and solid-solid interfaces

Surface and interface dynamics and vibrations

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

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Title: p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping
Creators - without role: K Ohkawa - Panasonic
T Mitsuyu - Panasonic
Publication Details: Journal of applied physics, Vol.70(1), pp.439-442
Publisher: American Institute of Physics
Identifiers: 9945330908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article