1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers

Other

Peer reviewed

J. Gyani, Frédéric Martinez, S. Soliverès, M. Valenza, C. Le Royer and E. Augendre

AIP Conference Proceedings, Vol.1129, pp.259-262

AIP

01/01/2009

Abstract

Electronics

Engineering Sciences

International audience

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Title: 1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers
Creators - without role: J. Gyani
Frédéric Martinez
S. Soliverès
M. Valenza
C. Le Royer
E. Augendre
Publication Details: AIP Conference Proceedings, Vol.1129, pp.259-262
Publisher: AIP
Identifiers: 9918702808331
Academic Unit: Majmaah University
Language: English
Resource Type: Other