Abstract
Experimental and theoretical studies are presented for exciton transitions in p‐i‐n GaAs/AlGaAs multiple coupled‐quantum‐well structures where each quantum well consists of two identical wells with a thin barrier. Electroabsorption and photocurrent studies are carried out to identify how the excitonic peaks respond to transverse electric fields. With a careful choice of the dimensions of the coupled quantum well, it is seen that the lowest heavy‐hole exciton peak moves at a rate ∼2.5 faster than in a square well. Thus strong modulation is obtained at much lower electric fields. The nature of the higher‐energy transitions is also studied.