Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

Jihed Laifi; Noureddine Chaaben; Houda Bouazizi; Najla Fourati; C. Zerrouki; Youssef El Gmili; Amor Bchetnia; J. P. Salvestrini; B. El Jani; J. Laifi

doi:10.1016/j.spmi.2016.02.037

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Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

Jihed Laifi, Noureddine Chaaben, Houda Bouazizi, Najla Fourati, C. Zerrouki, Youssef El Gmili, Amor Bchetnia, J. P. Salvestrini, B. El Jani and J. Laifi

Superlattices and microstructures, Vol.94, pp.30-38

Elsevier

01/06/2016

DOI: https://doi.org/10.1016/j.spmi.2016.02.037

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Condensed Matter

Engineering Sciences

Materials Science

Physics

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Title: Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE
Creators - without role: Jihed Laifi - University of Monastir
Noureddine Chaaben - University of Monastir
Houda Bouazizi - University of Monastir
Najla Fourati
C. Zerrouki - Conservatoire National des Arts et Métiers
Youssef El Gmili - Georgia Tech Lorraine
Amor Bchetnia - University of Monastir
J. P. Salvestrini - Georgia Tech Lorraine
B. El Jani - University of Monastir
J. Laifi - Al Jouf University
Publication Details: Superlattices and microstructures, Vol.94, pp.30-38
Publisher: Elsevier
Identifiers: 9912597808331
Academic Unit: Al Jouf University; Qassim University
Language: English
Resource Type: Other